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NE052025-28 - TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 400MA I(C) | TO-39 TRANSISTOR | BJT | NPN | 6A I(C) | SOT-119VAR TRANSISTOR | BJT | NPN | 10A I(C) | SOT-119VAR TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.2A I(C) | RFMOD 晶体管|晶体管|叩| 18V的五（巴西）总裁| 2.2AI（丙）| RFMOD TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.2A I(C) | STX-M4 晶体管|晶体管|叩| 18V的五（巴西）总裁| 2.2AI（丙）|希捷M4 TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 3A I(C) | STX-M4 晶体管|晶体管|叩| 18V的五（巴西）总裁| 3A条一（c）|希捷M4 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | RFMOD 晶体管|晶体管|叩| 12V的五（巴西）总裁| 750mA电流一（c）| RFMOD TRANSISTOR | BJT | NPN | 3A I(C) | STX-M4 晶体管|晶体管|叩| 3A条一（c）|希捷M4 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | RFMOD 晶体管|晶体管|叩| 12V的五（巴西）总裁| 750mA电流一c）| RFMOD

NE052025-28_588930.PDF Datasheet


Part No.	NE052025-28 NE050214E12 NEM054029-28 NEM054029-12 NE051091-12 NE051025-12 NE051525-12 NE050291-07 NE050290-07
Description	TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 400MA I(C) \| TO-39 TRANSISTOR \| BJT \| NPN \| 6A I(C) \| SOT-119VAR TRANSISTOR \| BJT \| NPN \| 10A I(C) \| SOT-119VAR TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 2.2A I(C) \| RFMOD 晶体管\|晶体管\|叩\| 18V的五（巴西）总裁\| 2.2AI（丙）\| RFMOD TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 2.2A I(C) \| STX-M4 晶体管\|晶体管\|叩\| 18V的五（巴西）总裁\| 2.2AI（丙）\|希捷M4 TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 3A I(C) \| STX-M4 晶体管\|晶体管\|叩\| 18V的五（巴西）总裁\| 3A条一（c）\|希捷M4 TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 750MA I(C) \| RFMOD 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 750mA电流一（c）\| RFMOD TRANSISTOR \| BJT \| NPN \| 3A I(C) \| STX-M4 晶体管\|晶体管\|叩\| 3A条一（c）\|希捷M4 TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 750MA I(C) \| RFMOD 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 750mA电流一c）\| RFMOD
File Size	136.01K / 2 Page
Maker	Alpha Industries, Inc. NXP Semiconductors N.V. Vicor, Corp.
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Full text search : TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 400MA I(C) | TO-39 TRANSISTOR | BJT | NPN | 6A I(C) | SOT-119VAR TRANSISTOR | BJT | NPN | 10A I(C) | SOT-119VAR TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.2A I(C) | RFMOD 晶体管|晶体管|叩| 18V的五（巴西）总裁| 2.2AI（丙）| RFMOD TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.2A I(C) | STX-M4 晶体管|晶体管|叩| 18V的五（巴西）总裁| 2.2AI（丙）|希捷M4 TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 3A I(C) | STX-M4 晶体管|晶体管|叩| 18V的五（巴西）总裁| 3A条一（c）|希捷M4 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | RFMOD 晶体管|晶体管|叩| 12V的五（巴西）总裁| 750mA电流一（c）| RFMOD TRANSISTOR | BJT | NPN | 3A I(C) | STX-M4 晶体管|晶体管|叩| 3A条一（c）|希捷M4 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 750MA I(C) | RFMOD 晶体管|晶体管|叩| 12V的五（巴西）总裁| 750mA电流一c）| RFMOD

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Related keyword From Full Text Search System

NE052025-28 band	NE052025-28 Electronic	NE052025-28 Digital	NE052025-28 Differential	NE052025-28 Protect
NE052025-28 board	NE052025-28 mos	NE052025-28 capacitors	NE052025-28 asynchronous	NE052025-28 standard

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